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The growth of the telecommunication industry has accelerated the development of a variety of radiofrequency (RF) devices. With the rapid development of wireless communication systems such as satellite, navigation, and internet telephony, communication applications demand ever larger bandwidth, faster data transmission, higher frequency resonators and densities. Traditional ceramic dielectric filters cannot be integrated with circuits due to their large volume. With the recent advance and development of nanoscale technology and processing, new types of functional thin film materials and devices are pushing the frontier of micro-nanosystem technology for their performance, particularly for frequency controllers. 

  Chapter1 Introduction 1.1 RF Filters in GHz Wireless Applications 1.1.1 The Requirement of RF Filters 1.1.2 Types ofRF Filters 1.2 Bulk Acoustic Wave （BAW） Resonator and Its Development 1.2. BAW Resonator 1.2.2 Micro Electromechanical Systems （MEMS） Applied in BAW 1.3 The Principle and Configurations ofFBAR 1.3.1 The Principle of FBAR 1.3.2 Typical FBAR Configurations 1.3.3 Current Status of FBAR Filters 1.4 The Application of FBAR in Mass Loading Sensors 1.4.1 Acoustic Resonant Mass Sensors 1.4.2 FBAR Mass Loading Sensors 1.5 Overview of the Chapters References Chapter2 Propagation of Acoustic Wave in Crystals 2.1 The Equation ofAcoustic Plane Wave 2.1.1 The Equation of Elastic Deformation 2.1.2 Christoffel Equation 2.2 Propagation of Plane Wave in Isotropic Medium 2.3 Propagation of Plane Wave in Anisotropic Medium 2.3.1 Dispersion Relation and Inverse Velocity Face 2.3.2 The Solution of Wave Equation in Cubic Crystal 2.4 Piezoelectrically Active Wave Propagation 2.5 The Plane Wave Propagating in Piezoelectric Hexagonal Crystal References Chapter 3 The Theory of FBAR 3.1 The Electric Impedance of the Ideal FBAR 3.1.1 The Analytic Expression of the Electric Impedance 3.1.2 The Resonance of FBAR 3.2 The Electric Impedance of the Compound FBAR 3.2.1 The Definition of the Acoustic Impedance 3.2.2 The Boundary Condition of Compound FBAR 3.3 The Loss and Performances of FBAR 3.4 The Equivalent Electromechanical Mode of FBAR 3.4.1 The Equivalent Mode of the Layers 3.4.2 The Universal Equivalent Mode of FBAR 3.4.3 The Equivalent Circuit Nears the Resonance of FBAR 3.5 The Calculated Influence of the Materials and Structure on the Device Performance 3.5.1 The Effects of the Electrode 3.5.2 The Influences of' Supporting Layer and the Residue Silicon Layer References Chapter 4 The Deposition and Etching of AIN Film 4.1 Deposition of AIN Film by RF Magnetron Sputtering 4.1.1 Introduction 4.1.2 Experimental 4.1.3 The Effect of RF Power on the Film Texture 4.1.4 The Influence of Ambit Pressure and the Ratio of N2/Ar on the Film Structure 4.1.5 The Influence of the Substrate Temperature on the Film Texture 4.1.6 The Microstructure and Chemical Component 4.2 The Scructural Characreristics of AIN Films Deposited on Diff'erent Eleccrodes 4.3 Dry Etching of AIN Films Using Fluoride Plasma 4.3.1 The Dry Etching of AIN Films 4.3.2 Experimental 4.3.3 The Etching Rate 4.3.4 The Morphologies 4.3.5 The Etching Mechanism. 4.4 The Wet Etching of AIN 4.4.1 The Wet Etching Process 4.4.2 Experimental 4.4.3 The Influence of the Film Texture 4.4.4 The Effects of Crystal Quality References …… Chapter 5 The FBAR with Membrane Structure Chapter 6 Solidly Mounted Acoustic Resonator Chapter 7 The Applications of FBAR in RF Filters Chapter 8 The FBAR Excited by Lateral Filed Chapter 9 High Sensitive Sensors Based on FBAR Index
 

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